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DISCRETE SEMICONDUCTORS
DATA SHEET
BLV935 UHF power transistor
Product specification 1995 Jun 29
Philips Semiconductors
Product specification
UHF power transistor
FEATURES * Emitter ballasting resistors for an optimum temperature profile * Gold metallization ensures excellent reliability * Internal input matching to achieve high power gain and easy design of wideband circuits. APPLICATIONS * Base stations in the 820 to 980 MHz range.
1 3 2 4
BLV935
DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor has internal input matching by means of MOS capacitors and is encapsulated in a 6-lead SOT273 flange envelope with a ceramic cap. All leads are isolated from the flange.
handbook, halfpage
c b
PINNING - SOT273
5 6
PIN 1 2 3 4 5 6
SYMBOL e e c b e e emitter emitter
DESCRIPTION
e
MAM033
collector base emitter emitter
Top view
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA RF performance at Th = 25 C in a common emitter test circuit. MODE OF OPERATION CW, class-AB f (MHz) 960 VCE (V) 26 PL (W) 30 Gp (dB) 9 C (%) 55
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
1995 Jun 29
2
Philips Semiconductors
Product specification
UHF power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature operating junction temperature up to Tmb = 25 C open base open collector CONDITIONS open emitter - - - - - - -65 - MIN.
BLV935
MAX. 70 30 3 4 4 70 +150 +200
UNIT V V V A A W C C
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Ptot = 70 W; Tmb = 25 C VALUE 2.5 0.3 UNIT K/W K/W
handbook, halfpage
10
MLD140
handbook, halfpage
100
MLD141
IC (A) (2)
P tot (W) (1) 80
(2) 60 1 40 (1)
20
10 1
1
10
V (V) CE
10 2
0 0 40 80 120 Th ( oC) 160
(1) Tmb = 25 C. (2) Th = 70 C.
(1) Continuous operation. (2) Short-time operation during mismatch.
Fig.2 DC SOAR.
Fig.3 Power derating curves.
1995 Jun 29
3
Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE Cc Cre Notes 1. Measured under pulsed conditions: tp 500 s; 0.01. 2. CC value is that of the die only; it is not measurable because of internal matching network. PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain collector capacitance feedback capacitance CONDITIONS open emitter; IC = 20 mA open base; IC = 50 mA open collector; IE = 1 mA VBE = 0; VCE = 28 V VCE = 10 V; IC = 1.5 A; note 1 VCB = 26 V; IE = ie = 0; f = 1 MHz; note 2 VCE = 26 V; IC = 0; f = 1 MHz MIN. 70 30 3 - 30 - - - - - - - 25 17 TYP.
BLV935
MAX. - - - 2 120 - -
UNIT V V V mA pF pF
MLC680
handbook, halfpage
100
handbook, halfpage
h FE 80 (1) 60 (2) 40
100 Cc (pF) 80
MLC681
60
40
20
20
0
0
0
1
2
3
4
5 I C (A)
6
0
10
20
30
40 50 VCB (V)
Measured under pulsed conditions; tp 500 s; 0.01. (1) VCE = 26 V. (2) VCE = 10 V.
Cc value is that of the die only; it is not measurable because of internal matching network. f = 1 MHz.
Fig.4
DC current gain as a function of collector current; typical values.
Fig.5
Collector capacitance as a function of collector-base voltage; typical values.
1995 Jun 29
4
Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION RF performance at Th = 25 C in a common emitter, class-AB test circuit; Rth mb-h = 0.3 K/W. MODE OF OPERATION CW, class-AB f (MHz) 960 VCE (V) 26 ICQ (mA) 100 PL (W) 30 Gp (dB) 9 typ. 10
BLV935
C (%) 55 typ. 60
Ruggedness in class-AB operation The BLV935 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases at rated output power, under the following conditions: VCE = 26 V; f = 960 MHz; ICQ = 100 mA; Th = 25 C; Rth mb-h = 0.3 K/W.
handbook, halfpage
16
MLD142
MLD143
80 (%) 60
handbook, halfpage
50
Gp (dB) 12
PL (W)
40
Gp 8 40
30
20 4 20 10
0 0 10 20 30 40 P L (W) 50
0
0 0 2 4 6 8 P i (W) 10
VCE = 26 V. ICQ = 100 mA. f = 960 MHz.
VCE = 26 V. ICQ = 100 mA. f = 960 MHz.
Fig.6
Power gain and efficiency as functions of load power; typical values.
Fig.7
Load power as a function of input power; typical values.
1995 Jun 29
5
Philips Semiconductors
Product specification
UHF power transistor
BLV935
handbook, full pagewidth
R1 L11 C12
C6
C7
C8
C9
C10
C11
R2 L12 VCC C13
Vbias
L9
L10
input 50
,,,,,,,,,,,, ,,,,,,,,,,,, ,,,,
L3 L6 L1 L2 C1 L4 DUT L5 C4 L7 L8 C2 C5 C3
output 50
MLD144
Fig.8 Class-AB broadband test circuit at 850 to 980 MHz.
List of components (see Figs 8 and 9) COMPONENT C1, C4 C2 C3 C5 C6, C11 C7, C8, C9, C10 C12, C13 L1, L8 L2, L7 L3, L6 L4, L5 L9 DESCRIPTION multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 63 V solid aluminium capacitor stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 microchoke VALUE 68 pF 0.7 pF 3.9 pF 2 pF 1 nF 20 pF 10 F 50 50 9 38 100 nH 41 x 2.4 mm 12 x 2.4 mm 10 x 20 mm 4.5 x 3.5 mm 4322 057 01071 2222 030 38109 DIMENSIONS CATALOGUE No.
1995 Jun 29
6
Philips Semiconductors
Product specification
UHF power transistor
BLV935
COMPONENT L10
DESCRIPTION 4 turns 1 mm enamelled copper wire (close wound) grade 3B Ferroxcube wideband RF choke metal film resistor
VALUE 65 nH
DIMENSIONS internal diameter: 4 mm length: 4 mm leads: 2 x 5 mm
CATALOGUE No.
L11, L12 R1, R2 Notes
4312 020 36642 10 ; 0.4 W 2322 151 71009
1. American Technical Ceramics type 100B or capacitor of same quality. 2. The striplines are on double-clad PCB with PTFE fibre-glass dielectric (r = 2.2); thickness 132".
1995 Jun 29
7
Philips Semiconductors
Product specification
UHF power transistor
BLV935
handbook, full pagewidth
70
70
70
70
IN
OUT
KV9004
KV9005
C10 V bias C12 R1 L1 C2 C3 IN OUT L2 C1 L4 L5 C5 C4 L7 L11 C8 C6 C7 L9 C9 L6 L10 L12 C11 R2 L8 C13 VCC
L3
MLD145
Dimensions in mm. The components are located on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as an earth. Earth connections are made by fixing screws, hollow rivets and copper straps around the board and under the emitters to provide a direct contact between the component side and the ground plane.
Fig.9 Printed circuit board and component layout for class-AB test circuit (850-980 MHz). 1995 Jun 29 8
Philips Semiconductors
Product specification
UHF power transistor
BLV935
MLD146
MLD147
handbook, halfpage
10
handbook, halfpage
15
Zi () 8 xi 6
ZL () 10
RL
5
4 ri 2
0
5
XL
0 800
840
880
920
960 1000 f (MHz)
10 800
840
880
920
960 1000 f (MHz)
VCE = 26 V; ICQ = 100 mA; PL = 30 W; Th = 25 C; Rth mb-h = 0.3 K/W.
VCE = 26 V; ICQ = 100 mA; PL = 30 W; Th = 25 C; Rth mb-h = 0.3 K/W.
Fig.10 Input impedance as a function of frequency (series components); typical values.
Fig.11 Load impedance as a function of frequency (series components); typical values.
handbook, halfpage
12
MLD148
Gp (dB) 8
handbook, halfpage
4
Zi ZL
MBA451
0 800
840
880
920
960 1000 f (MHz)
VCE = 26 V; ICQ = 100 mA; PL = 30 W; Th = 25 C; Rth mb-h = 0.3 K/W.
Fig.12 Power gain as a function of frequency; typical values.
Fig.13 Definition of transistor impedance.
1995 Jun 29
9
Philips Semiconductors
Product specification
UHF power transistor
PACKAGE OUTLINE
BLV935
1/1 page = 296 mm (Datasheet)
2.6
15.8 max 10.4 max 2.6
27 mm
2.4 1.8
1 3 5
2 4 3.3 18.42 2.8 25 max 11.0 10.6 6
2.4 1.8
3.40 3.05
2.8 7.2 max
MSA025 - 2
4.4 4.0 0.13 10.3 max Dimensions in mm. Torque on screw: min. 0.6 Nm; max. 0.75 Nm. Recommended screw: cheese-head 4-40 UNC/2A. Heatsink compound must be applied sparingly and evenly distributed.
Fig.14 SOT273.
1995 Jun 29
10
Philips Semiconductors
Product specification
UHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLV935
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1995 Jun 29
11
Philips Semiconductors - a worldwide company
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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127041/500/01/pp12 Document order number: Date of release: 1995 Jun 29 9397 750 00594

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